Ferroelectric domain walls could be used as active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices, but no real working nanodevices exploiting these nanostructures has been made to date. Researchers in Spain have now fabricated a multiferroic tunnel junction based on ferromagnetic La0.7Sr0.3MnO3 electrodes separated by an ultrathin ferroelectric BaTiO3 tunnel barrier that contains a “head-to-head” domain wall. This wall can be used to control the transport properties of the tunnel junction itself and endow it with new functionalities……….
http://nanotechweb.org/cws/article/tech/68498
