Researchers in Moldova, Australia, the UK and Germany have developed a new way to improve the electrical and optical properties of gallium nitride by photoelectrochemically etching the material once it has been grown by a technique known as hydride vapour phase epitaxy (HPVE). Gallium nitride is a wide gap semiconducting compound and is the second most important semiconductor after silicon. It is widely used in modern solid-state lighting, high-temperature and high-power electronics……..
http://nanotechweb.org/cws/article/tech/64156
