A new tunnel field-effect transistor (TFET) with an atomically thin current-carrying channel that operates at ultralow supply voltages has been unveiled by a team of researchers at the University of California, Santa Barbara, and Rice University in Texas. The new device, which is made from a 2D semiconducting crystal and a bulk germanium substrate, can be switched on at just 0.1 V. It could be used in ultradense and lower-power integrated circuits and to make ultrasensitive bio- and gas sensors……
http://nanotechweb.org/cws/article/tech/62770
