Avalanche effect allows fast-acting phase-change memory

Strained interfacial phase-change materials (iPCMs) offer a fast and energy-efficient way to write and store computer data. Devices based on this technique could improve on current media by encoding information in three dimensions. Now, researchers in Singapore and China have shown that the speed at which interfacial phase-change proceeds is due to a self-reinforcing avalanche effect. The results will help develop the next generation of iPCM-based memory devices…..

http://nanotechweb.org/cws/article/tech/69967