Researchers at IBM in New York say that wafer-scale molybdenum disulphide – a technologically important 2D material that shows great promise for a host of device applications – could contain a significant amount of electronic band tail states. These charge-trapping defects could adversely affect the electronic properties of MoS2 but improving sample quality could help overcome this problem says the team………
http://nanotechweb.org/cws/article/tech/56058
