Researchers at the University of Texas say they have made the first flexible ambipolar field-effect transistor based on few-layer black phosphorus (or phosphorene). The device has a high carrier mobility of around 310 cm2/V.s and an effective drain current modulation of more than 103. These values are better than those seen in flexible transistors made from graphene and other 2D materials…….
http://nanotechweb.org/cws/article/tech/60458
