Traditional inorganic semiconductors inevitably contain “dangling bonds” at the grain boundaries that exist in such structures because of ionic or covalent bond breaking in these 3D crystals. These bonds can significantly degrade device performance if not dealt with. Now, a team of researchers from China and Canada is saying that covalent bonds in a new absorber material, antimony selenide (Sb2Se3), are only present along the (Sb4Se6)n chains in this material. If properly aligned, that is, with the chains standing vertically on a substrate, the grain boundaries could be dangling-bond free…..
http://nanotechweb.org/cws/article/tech/61239
