Researchers in the US and France have succeeded in opening up the largest bandgap ever (of 0.5 eV) in graphene sheets by growing the material on the silicon face of a silicon carbide substrate. The technique could be used to engineer the electronic properties of graphene for use in applications like high-speed, high-power or high-voltage transistors that are faster than any that exist today…..
http://nanotechweb.org/cws/article/tech/62747
