Heterostructures based on 2D layered semiconductors such as gallium selenide (GaSe) and conventional 3D semiconductors such as gallium nitride (GaN) could be used to make novel, high-performance electronics and optoelectronics devices. However, such devices will require high-quality materials at the wafer scale with excellent crystalline order and sharp interfaces. A team of researchers at The Ohio State University has now addressed this challenge by developing a method to integrate GaSe on GaN, while making sure that the GaSe remains epitaxial………
http://nanotechweb.org/cws/article/tech/68868
