Researchers at the University of Texas at Austin say that they have fabricated flexible radio-frequency transistors from molybdenum disulphide (MoS2) with the highest ever intrinsic cut-off frequency of 5.6 GHz and power gain of 3.3 GHz. The devices, which are grown by chemical vapour deposition on large sheets of silica, could find use in a wide range of wireless communication applications, especially in wearable technologies, “smart” patches and the internet of things (IoT)……..
http://nanotechweb.org/cws/article/tech/63633
