Researchers at the King Abdullah University of Science and Technology in Saudi Arabia (KAUST) say they have succeeded in designing a new type of nanotube tunnelling field-effect transistor (TFET) that has a much higher drive current than TFETs made from nanowires. The new TFET also switches on and off faster while running on less power and being smaller. It might be used in ultrahigh performance and ultralow standby power logical applications as well as to make ultra-compact non-volatile memory devices………
http://nanotechweb.org/cws/article/tech/61100
