Low-frequency electronic noise is a problem in many nanodevices and circuits, but researchers at the University of California, Riverside, have now found that they can significantly reduce this noise in transistors made from graphene if they encase the charge-carrying graphene channel between two layers of hexagonal boron nitride (hBN). Potential applications for this hybrid material include analogue electronics, high-frequency communications and advanced sensors……
http://nanotechweb.org/cws/article/tech/62031
