The operational efficiency of optoelectronic devices hinges on how the energy of injected electrons dissipates. But how these processes occur in nanostructures, which are predominantly surface with little bulk material, has been little understood. Now, studies of theluminescence under a scanning tunnelling microscope (STM) tip have revealed the dominant processes in electron energy dissipation at its surface of the industrially important semiconductor GaAs, giving an insight into the behaviour in GaAs at the nanoscale……..
http://nanotechweb.org/cws/article/tech/62304
