Gallium telluride interacts with light in an unusual way
Researchers in the US, Japan and China are the first to have studied the anisotropic light–matter interactions in gallium telluride (GaTe), a technologically important 2D semiconductor with in-plane anisotropy. Thanks to techniques like anisotropic optical extinction and Raman spectroscopy, they have found that the anisotropy is related to various parameters such as GaTe flake thickness, […]